參數(shù)資料
型號(hào)： BS170
廠商： GE Security, Inc.
英文描述： DMOS Transistors (N-Channel)
中文描述： DMOS晶體管（N溝道）
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 49K
代理商： BS170
April 1995
3
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC) at T
c
= 25
°
C
Total power dissipation up to T
amb
= 25
°
C
Storage temperature range
Junction temperature
V
DS
V
DG
V
GS
I
D
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
60 V
60 V
15 V
500 mA
830 mW
55 to +150
°
C
max.
150
°
C
From junction to ambient
R
th j-a
=
150 K/W
Drain-source breakdown voltage
V
GS
= 0; I
D
= 100
μ
A
min.
typ.
60
90
V
V
V
(BR)DS
Gate threshold voltage
V
GS
= V
DS
; I
D
= 1 mA
min.
max.
0.8
3.0
V
V
V
GS(th)
Gate-source leakage current
V
GS
= 15 V; V
DS
= 0
Drain cut-off current
V
DS
= 25 V; V
GS
= 0
Drain-source ON-resistance (note 1)
V
GS
= 10 V; I
D
= 200 mA
I
GSoff
max.
10 nA
I
DSS
max.
0.5
μ
A
typ.
max.
2.5
5.0
R
DS(on)
Forward transconductance (note 1)
V
DS
= 10 V; I
D
= 200 mA; f = 1 kHz
Capacitances at f = 1 MHz
V
DS
= 10 V; V
GS
= 0
g
fs
typ.
200 mS
typ.
max.
25
40
pF
pF
C
iss
C
os
typ.
max.
typ.
max.
22
30
pF
pF
pF
pF
C
rs
6
10
Switching times at I
D
= 200 mA
I
D
= 200 mA; V
DS
= 50 V;
typ.
max.
4
10
ns
ns
t
on
V
GS
= 0 to 10 V
t
off
typ.
max.
4
10
ns
ns
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參數(shù)描述
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