參數(shù)資料
型號(hào): BS62LV2001DC
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Very Low Power/Voltage CMOS SRAM 256K X 8 bit
中文描述: 非常低功率/電壓CMOS SRAM的256K × 8位
文件頁數(shù): 2/10頁
文件大小: 283K
代理商: BS62LV2001DC
R0201-BS62LV2001
Revision 2.5
April 2002
10
BSI
R0201-BS62LV2001
REVISION HISTORY
Revision
Description
Date
Note
2.2
2001 Data Sheet release
Apr. 15, 2001
2.3
Modify Standby Current (Typ. and
Max.)
Jun. 29, 2001
2.4
To add DICE form
March 06,2002
2.5
Modify some AC parameters.
Modify 5V ICCSB1_Max(I-grade)
from 10uA to 25uA.
April,11,2002
BS62LV2001
相關(guān)PDF資料
PDF描述
BS62LV2001DI Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001SC Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001SI Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001STC Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001STI Very Low Power/Voltage CMOS SRAM 256K X 8 bit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS62LV2001DI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001SC 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001SI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001STC 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2001STI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit