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參數(shù)資料
| 型號(hào)： | BS62LV2001DC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 283K |
| 代理商： | BS62LV2001DC |
R0201-BS62LV2001
Revision 2.5
April 2002
2
R0201-BS62LV2001
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 8-bit words in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0 – DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
TRUTH TABLE
PIN DESCRIPTIONS
BSI
BS62LV2001
CIN
Input
Capacitance
VIN=0V
6
pF
CDQ
Input/Output
Capacitance
VI/O=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C2.4V ~ 5.5V
Industrial
-40 O C to +85 O C2.4V ~ 5.5V
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not tested.
SYMBOL
PARAMETER
RATING
UNITS
V TERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
T BIAS
Temperature Under Bias
C
-40 to +125
O
T STG
Storage Temperature
C
-60 to +150
O
P T
Power Dissipation
1.0
W
I OUT
DC Output Current
mA
20
MODE
WE
CE1
CE2
OE
I/O OPERATION
Vcc CURRENT
XH
X
Not selected
(Power Down)
ICCSB, ICCSB1
XX
L
X
High Z
Output Disabled
H
L
H
High Z
ICC
Read
H
L
H
L
DOUT
ICC
Write
L
H
X
DIN
ICC
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62LV2001DI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001SC | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001SI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001STC | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001STI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV2001DI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001SC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001SI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001STC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001STI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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