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參數(shù)資料
| 型號(hào)： | BU2507 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 擴(kuò)散硅功率晶體管 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | BU2507 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
= 4 A; f = 16 kHz
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 4.0 A; T
j
= 85C; f = 16 kHz
Fig.10. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
0.5
1
1.5
2
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBEsat / V
Ths = 25 C
Ths = 85 C
BU2507AF/AX
IC = 4 A
IC = 3 A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2507AF/DF/AX/DX
0
0.5
1
1.5
2
0.1
1
IB / A
Ptot / W
10
Ths = 25 C
Ths = 85 C
1E-06
1E-4
10E-2
t / s
1E+00
0.001
0.01
0.1
1
10
BU2507AF/X/DF/X
Zth / K/W
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
0
0.5
1
1.5
2
0
2
4
6
8
10
BU2507AF/AX/Df/DX85ts/tf
IB / A
ts/tf/ us
September 1997
4
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BU2507AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2507DX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507FV | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-precision 10bit 4ch/6ch D/A Converters |
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