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參數(shù)資料
| 型號： | BU2507DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BU2507DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507DF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.200
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參數(shù)描述 |
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| BU2507DX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507FV | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-precision 10bit 4ch/6ch D/A Converters |
| BU2507FV-E2 | 功能描述:數(shù)模轉(zhuǎn)換器- DAC 10 BIT D/A CNVTR 14-Pin RoHS:否 制造商:Texas Instruments 轉(zhuǎn)換器數(shù)量:1 DAC 輸出端數(shù)量:1 轉(zhuǎn)換速率:2 MSPs 分辨率:16 bit 接口類型:QSPI, SPI, Serial (3-Wire, Microwire) 穩(wěn)定時間:1 us 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-14 封裝:Tube |
| BU2508 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Enhanced PowerBridge Rectifiers |
| BU25085S-E3/45 | 功能描述:橋式整流器 25 Amp 800 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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