參數資料
型號： BUK7605-30A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Aluminum Snap-In Capacitor; Capacitance: 15000uF; Voltage: 50V; Case Size: 35x45 mm; Packaging: Bulk
中文描述： 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-404, 3 PIN
文件頁數： 2/7頁
文件大?。?/td> 54K
代理商： BUK7605-30A
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7605-30A
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
2
1
-
-
-
-
-
-
TYP.
-
-
3.0
-
-
0.05
-
2
4.3
-
MAX.
-
-
4.0
-
4.4
10
500
100
5
9.3
UNIT
V
V
V
V
V
μ
A
μ
A
nA
m
m
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 30 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
R
DS(ON)
Gate source leakage current
Drain-source on-state
resistance
V
GS
=
±
20 V; V
= 0 V
V
GS
= 10 V; I
D
= 25 A
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
TYP.
4500
1500
960
35
130
155
150
2.5
MAX.
6000
1800
1300
55
200
230
220
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
load
=1.2
;
V
GS
= 10 V; R
G
= 10
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
75
UNIT
A
-
-
-
-
-
-
240
1.2
-
-
-
A
V
V
ns
μ
C
I
F
= 25 A; V
GS
= 0 V
I
F
= 75 A; V
GS
= 0 V
I
F
= 75 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.85
1.1
400
1.0
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 75 A; V
≤
25 V;
V
GS
= 10 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
TYP.
-
MAX.
500
UNIT
mJ
August 1999
2
Rev 1.100
相關PDF資料
PDF描述
BUK7606-30 Aluminum Snap-In Capacitor; Capacitance: 18000uF; Voltage: 50V; Case Size: 35x50 mm; Packaging: Bulk
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相關代理商/技術參數
參數描述
BUK7605-30A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7605-30A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7606-30 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK7606-55A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET
BUK7606-55A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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