參數(shù)資料
型號(hào): BUK7605-30A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Aluminum Snap-In Capacitor; Capacitance: 15000uF; Voltage: 50V; Case Size: 35x45 mm; Packaging: Bulk
中文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-404, 3 PIN
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 54K
代理商: BUK7605-30A
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7605-30A
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.00001
0.001
0.1
10
0.001
0.01
0.1
1
D =
t
p
t
p
T
T
P
D
t
Zth / (K/W)
t/S
D =
0.5
0.2
0.1
0.05
0.02
0
0
2
4
6
8
10
0
100
200
300
400
ID/A
VDS/V
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
20.0
14.0
12.0
VGS/V =
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
3
4
5
6
7
8
9
10
11
RDS(ON)/mOhm
VGS/V =
ID/A
5.5
6.0
6.5
7.0
8.0
10.0
1
10
100
1
10
100
1000
ID/A
RDS(ON) = VDS/ID
VDS/V
tp =
100mS
10mS
1mS
100uS
DC
August 1999
3
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK7606-30 Aluminum Snap-In Capacitor; Capacitance: 18000uF; Voltage: 50V; Case Size: 35x50 mm; Packaging: Bulk
BUK7624-55 TrenchMOS transistor Standard level FET
BUK7628-55 TrenchMOS transistor Standard level FET
BUK7675-55 TrenchMOS transistor Standard level FET
BUK7720-55A CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK7605-30A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7605-30A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7606-30 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
BUK7606-55A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET
BUK7606-55A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube