參數(shù)資料
型號： BUK96150-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS transistor standard level FET
中文描述： 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 71K
代理商： BUK96150-55A
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK95150-55A
BUK96150-55A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
envelope
TO220AB and SOT404 . Using
’
trench
’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
purpose
applications.
SYMBOL
PARAMETER
MAX.
UNIT
available
in
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
13
53
175
V
A
W
C
switching
V
GS
= 5 V
V
GS
= 10 V
150
137
m
m
PINNING
TO220AB & SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab/mb drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
±
V
GSM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
t
p
≤
50
μ
S
MIN.
-
-
-
-
MAX.
55
55
10
15
UNIT
V
V
V
V
I
D
I
D
I
DM
P
tot
T
stg
, T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
13
9
53
53
175
A
A
A
W
C
- 55
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
TYP.
-
MAX.
2.8
UNIT
K/W
R
th j-a
in free air
60
-
K/W
R
th j-a
Minimum footprint, FR4
board
50
-
K/W
1 2 3
tab
1
3
mb
2
SOT404
TO220AB
d
g
s
February 2000
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK96150-55A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9615-100A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-Channel Enhancement mode logic Level field-Effect power Transistor
BUK9615-100A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9615-100A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9615-100A/C,118 制造商:NXP Semiconductors 功能描述:- Tape and Reel
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