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參數(shù)資料
| 型號： | BUK96150-55A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor standard level FET |
| 中文描述： | 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BUK96150-55A |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK95150-55A
BUK96150-55A
Fig.5. Typical output characteristics, T
j
= 25 C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical on-state resistance, T
= 25 C
.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 13 A;
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.9. Typical transconductance, T
= 25 C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
VDS/V
ID/A
2.8
2.6
2.4
3.0
3.6
3.4
3.2
3.8
4.0
6.0
5.5
10.0
VGS/V =
4.4
4.8
5.0
6.5
7.0
7.5
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
VGS/V
ID/A
Tj/C= 175
o
C
25
o
C
0
10
20
30
40
50
60
70
20
25
30
35
40
ID/A
RDS(ON)/mOhm
VGS/V=
3.0
3.2
3.6
4.0
5.0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
ID/A
gfs/S
3
4
5
6
7
8
9
10
22
23
24
25
26
27
28
29
30
31
32
33
ID/A
RDS(ON)/mOhm
0.5
1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
Tmb / degC
a
Rds(on) normalised to 25degC
February 2000
4
Rev 1.000
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參數(shù)描述 |
|---|---|
| BUK96150-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9615-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-Channel Enhancement mode logic Level field-Effect power Transistor |
| BUK9615-100A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9615-100A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK9615-100A/C,118 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
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