參數(shù)資料
型號(hào)： BUK9618-55
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS transistor Logic level FET
中文描述： 57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-404, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 69K
代理商： BUK9618-55
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9618-55
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
1.0
0.5
-
-
-
-
-
10
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
-
MAX.
-
-
2.0
-
2.3
10
500
1
10
-
UNIT
V
V
V
V
V
μ
A
uA
μ
A
μ
A
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
5 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
R
DS(ON)
V
GS
= 5 V; I
D
= 25 A
-
-
15
-
18
38
m
m
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
25
-
-
-
-
-
-
-
-
TYP.
52
2000
390
200
30
80
100
50
2.5
MAX.
-
2600
490
290
45
130
140
75
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 25 A;
V
GS
= 5 V; R
G
= 10
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
57
UNIT
A
-
-
-
-
-
-
200
1.2
-
-
-
A
V
V
ns
μ
C
I
F
= 25 A; V
GS
= 0 V
I
F
= 50 A; V
GS
= 0 V
I
F
= 50 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.95
1.0
48
0.1
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
April 1998
2
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK9618-55A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS logic level FET
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BUK9618-55A,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9618-55T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 57A I(D) | SOT-404
BUK961R4-30E 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 120A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 120A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
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