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參數(shù)資料
| 型號： | CAT28F102NA-12T |
| 元件分類： | PROM |
| 英文描述： | 64K X 16 FLASH 12V PROM, 120 ns, PQCC44 |
| 封裝： | PLASTIC, LCC-44 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 107K |
| 代理商： | CAT28F102NA-12T |
CAT28F102
5
Doc. No. 1014, Rev. A
Note:
(1)
This parameter is tested initially and after a design or process change that affects the parameter.
(2)
Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3)
Input Rise and Fall Times (10% to 90%) < 10 ns.
(4)
Input Pulse Levels = 0.45V and 2.4V. For high speed input pulse levels 0.0V and 3.0V.
(5)
Input and Output Timing Reference = 0.8V and 2.0V. For high speed input and output timing reference=1.5V.
(6)
Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
(7)
For Load and Reference Points see Figures 1 and 2
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
INPUT PULSE LEVELS
REFERENCE POINTS
2.0 V
0.8 V
2.4 V
0.45 V
Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)
Figure 2. A.C. Testing Load Circuit (example)
JEDEC
Standard
28F102- 10 (7)
28F102- 12
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tAVAV
tRC
Read Cycle Time
100
120
ns
tELQV
tCE
CE Access Time
100
120
ns
tAVQV
tACC
Address Access Time
100
120
ns
tGLQV
tOE
OE Access Time
45
50
ns
tAXQX
tOH
Output Hold from Address
0
ns
OE/CE Chan
tGLQX
tOLZ(1)(6) OE to Output in Low-Z
0
ns
tELQX
tLZ(1)(6)
CE to Output in Low-Z
0
ns
tGHQZ
tDF(1)(2)
OE High to Output High-Z
25
30
ns
tEHQZ(1)(2)
-
CE High to Output High-Z
35
40
ns
tWHGL
Write Recovery Time Before
6
s
Read
A.C. CHARACTERISTICS, Read Operation
V
CC = +5V ±10%, unless otherwise specified
Main Menu
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