參數(shù)資料
型號： CFY25
廠商： SIEMENS AG
英文描述： GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
中文描述： 砷化鎵場效應(yīng)管（低噪聲高增益對于前端放大器離子注入平面結(jié)構(gòu)全部鍍金）
文件頁數(shù)： 7/8頁
文件大?。?/td> 2088K
代理商： CFY25
CFY25
Semiconductor Group
7 of 8
Draft D, Sep. 0000
Order Instructions:
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY25- (nnl) (ql)
(nnl):
Noise/Gain/Power Level
Quality Level
(ql):
Ordering Example:
Ordering Code: Q62703F119
CFY25-20P
For CFY25, Noise/Gain/Power Level 20P:
NF < 2.1dB, G
a
> 8.5 dB, P
1dB
> 14 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
-
HiRel
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
++89 6362 4480
++89 6362 5568
martin.wimmers@siemens-scg.com
Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
相關(guān)PDF資料
PDF描述
CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY67 HiRel K-Band GaAs Super Low Noise HEMT
CFY67-06 HiRel K-Band GaAs Super Low Noise HEMT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CFY25-17 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-20 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET
CFY25-20 (S) 功能描述:射頻GaAs晶體管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
CFY25-20P 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET
CFY25-23 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET
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