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參數(shù)資料
| 型號(hào)： | CFY27-38 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel Ku-Band GaAs General Purpose MESFET |
| 中文描述： | 伊雷爾Ku波段砷化鎵通用場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 572K |
| 代理商： | CFY27-38 |
CFY27
S emiconductor Group
2 of 9
Draft D, S eptember 99
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
9
V
Drain-gate voltage
V
DG
11
V
Gate-source voltage (reverse / forward)
V
GS
- 6... + 0.5
V
Drain current
I
D
420
mA
Gate forward current
I
G
5
mA
RF Input Power, C- and X-Band
1)
P
RF,in
+ 20 (tbc.)
dBm
J unction temperature
T
J
175
°
C
Storage temperature range
T
stg
- 65... + 175
°
C
Total power dissipation
2)
P
tot
900
mW
Soldering temperature
3)
T
sol
230
°C
Thermal Resistance
J unction-soldering point
R
th J S
≤
150 (tbc.)
K/W
Notes.:
1) For V
DS
≤
5 V. For V
DS
> 5 V, derating is required.
2) At T
S
= + 40 °C. For T
S
> + 40 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
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| CFY27 | HiRel Ku-Band GaAs General Purpose MESFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CFY27-P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY30 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
| CFY35 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-20 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-23 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
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