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參數(shù)資料
| 型號(hào)： | CFY27-38 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel Ku-Band GaAs General Purpose MESFET |
| 中文描述： | 伊雷爾Ku波段砷化鎵通用場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 572K |
| 代理商： | CFY27-38 |
CFY27
S emiconductor Group
3 of 9
Draft D, S eptember 99
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
I
Dss
150
270
420
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 1 mA
-V
Gth
1.0
2.0
3.2
V
Drain current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
I
Dp
-
< 12
60
μA
Gate leakage current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
-I
Gp
-
< 12
30
μA
Transconductance
V
DS
= 3 V, I
D
= 120 mA
g
m120
130
160
-
mS
Gate leakage current at operation
V
DS
= 3 V, I
D
= 120 mA
-I
G120
-
< 3
-
μA
Thermal resistance
junction to soldering point
R
th J S
-
125
-
K/W
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| CFY27 | HiRel Ku-Band GaAs General Purpose MESFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CFY27-P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY30 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
| CFY35 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-20 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
| CFY35-23 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
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