參數資料
型號: CFY27-P
廠商: INFINEON TECHNOLOGIES AG
英文描述: HiRel Ku-Band GaAs General Purpose MESFET
中文描述: 伊雷爾Ku波段砷化鎵通用場效應晶體管
文件頁數: 4/8頁
文件大小: 572K
代理商: CFY27-P
CFY27
S emiconductor Group
4 of 9
Draft D, S eptember 99
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
1)
V
DS
= 3 V, I
D
= 120 mA, f = 12 GHz
NF
dB
CFY27-P
-
< 3.6
-
CFY27-38
-
3.5
3.8
Associated gain.
1)
V
DS
= 3 V, I
D
= 120 mA, f = 12 GHz
G
a
dB
CFY27-P
-
> 7.8
-
CFY27-38
7.5
8.0
-
Output power at 1 dB gain compression
2)
V
DS
= 5 V, I
D(RF off)
= 120 mA, f = 2.3 GHz
P
1dB
dBm
CFY27-P
24.5
26
-
CFY27-38
-
> 25
-
Linear power gain
2)
V
DS
= 5 V, I
D
= 120 mA, f = 2.3 GHz,
P
in
= 0 dBm
G
lp
dB
CFY27-P
17.5
19
-
CFY27-38
-
> 18
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
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