參數(shù)資料
型號: CFY27
廠商: INFINEON TECHNOLOGIES AG
英文描述: HiRel Ku-Band GaAs General Purpose MESFET
中文描述: 伊雷爾Ku波段砷化鎵通用場效應晶體管
文件頁數(shù): 3/8頁
文件大小: 572K
代理商: CFY27
CFY27
S emiconductor Group
3 of 9
Draft D, S eptember 99
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
I
Dss
150
270
420
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 1 mA
-V
Gth
1.0
2.0
3.2
V
Drain current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
I
Dp
-
< 12
60
μA
Gate leakage current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
-I
Gp
-
< 12
30
μA
Transconductance
V
DS
= 3 V, I
D
= 120 mA
g
m120
130
160
-
mS
Gate leakage current at operation
V
DS
= 3 V, I
D
= 120 mA
-I
G120
-
< 3
-
μA
Thermal resistance
junction to soldering point
R
th J S
-
125
-
K/W
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