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參數(shù)資料
| 型號(hào)： | CLY10 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| 中文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 73K |
| 代理商： | CLY10 |
GaAs FET
CLY 10
_________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/7
17.12.96
HL EH PD 21
Electrical characteristics (TA= 25°C , unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current
VDS = 3 V VGS = 0 V
Drain-source pinch-off current
IDSS
1.2
1.6
2.4
A
VDS = 3 V VGS = -3.8 V
Gate pinch-off current
ID
-
-
200
μA
VDS = 3 V VGS = -3.8 V
Pinch-off Voltage
IG
-
10
35
μA
VDS= 3 V ID=200μA
Small Signal Gain
VGS(p)
-3.8
-2.8
-1.8
V
*
)
VDS = 3 V
Pin = 0 dBm
Small Signal Gain
ID = 700 mA
f = 1.8 GHz
G
-
9
-
dB
**
)
VDS = 3 V
Pin = 0 dBm
Output Power
ID = 700 mA
f = 1.8 GHz
G
-
8
-
dB
VDS = 3 V ID = 700 mA f = 1.8 GHz
Pin = 20.5 dBm
Output Power
Po
28
28.5
-
dBm
VDS = 5 V ID = 700 mA f = 0.9 GHz
Pin = 20 dBm
1dB-Compression Point
Po
32.0
32.5
-
dBm
VDS = 3 V ID = 700 mA f = 1.8 GHz
1dB-Compression Point
P1dB
-
28.5
-
dBm
VDS = 5 V ID = 700 mA f = 1.8GHz
Power Added Efficiency
P1dB
-
32.5
-
dBm
VDS = 5 V ID = 700 mA f = 1.8 GHz
Pin = 20 dBm
PAE
40
55
-
%
*
)
Matching conditions for maximum small signal gain: f = 1.8 GHz
Source Match:
Γ
ms
: MAG = 0.70, ANG -116°; Load Match:
Γ
ml
: ;MAG 0.68, ANG -145°
**
)
Power matching conditions: f = 1.8 GHz
Source Match:
Γ
ms
: MAG = 0.70, ANG -120°; Load Match:
Γ
ml
: ;MAG 0.78, ANG -130°
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CLY15 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| CL-Y-19X19 | 制造商:MALICO 功能描述:CLIP MBH19 3-3.6MM PK5 |
| CLY2 | 功能描述:射頻GaAs晶體管 GaAs LN MMIC RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| CL-Y-27X27 | 制造商:MALICO 功能描述:CLIP MBH27 3-3.6MM PK5 |
| CLY29 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
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