參數(shù)資料
型號: CP2104-F03-GM
廠商: Silicon Laboratories Inc
文件頁數(shù): 18/22頁
文件大小: 0K
描述: IC SGL USB-TO-UART BRIDGE 24QFN
產(chǎn)品培訓(xùn)模塊: CP21xx USB Bridge
標準包裝: 75
應(yīng)用: UART 至 USB 電橋
接口: UART,USB
電源電壓: 1.8V,3 V ~ 3.6 V
封裝/外殼: 24-WFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 24-QFN(4x4)
包裝: 管件
安裝類型: 表面貼裝
配用: 336-2007-ND - KIT EVAL FOR CP2104
其它名稱: 336-2008-5
CP2104
Rev. 1.1
5
2. Electrical Characteristics
Table 1. Absolute Maximum Ratings
Parameter
Conditions
Min
Typ
Max
Units
Ambient Temperature Under Bias
–55
125
°C
Storage Temperature
–65
150
°C
Voltage on RST, GPIO or UART Pin with respect to
GND
VIO > 2.2 V
VIO < 2.2 V
–0.3
5.8
VIO +
3.6
V
Voltage on VBUS with respect to GND
VDD > 3.0 V
VDD not powered
–0.3
5.8
VDD +
3.6
V
Voltage on VDD or VIO with respect to GND
–0.3
4.2
V
Maximum Total Current through VDD, VIO, and GND
500
mA
Maximum Output Current Sunk by RST or any I/O
pin
——
100
mA
Note: Stresses above those listed may cause permanent damage to the device. This is a stress rating only, and functional
operation of the devices at or exceeding the conditions in the operation listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 2. Global DC Electrical Characteristics
VDD = 3.0 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Units
Digital Supply Voltage (VDD)
3.0
3.6
V
Digital Port I/O Supply Voltage (VIO)1.8
VDD
V
Voltage on VPP with respect to GND during a
ROM programming operation
VIO > 3.3 V
5.75
VIO +
3.6
V
Capacitor on VPP for ROM programming
4.7
F
Supply Current1
Normal Operation;
VREG Enabled
17.0
18.5
mA
Supply Current1
Suspended;
VREG Enabled
—100
200
A
Supply Current—USB Pull-up2
—200
228
A
Specified Operating Temperature Range
–40
+85
°C
Notes:
1. If the device is connected to the USB bus, the USB Pull-up Current should be added to the supply current for total
supply current.
2. The USB Pull-up supply current values are calculated values based on USB specifications.
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