參數(shù)資料
型號: CXD2470R
廠商: Sony Corporation
英文描述: Timing Generator for Frame Readout CCD Image Sensor
中文描述: 時序發(fā)生器傳感器讀出CCD圖像幀
文件頁數(shù): 6/38頁
文件大小: 405K
代理商: CXD2470R
– 6 –
CXD2470R
Inverter I/O Characteristics for Oscillation
(Within the recommended operating conditions)
Item
Logical Vth
Input
voltage
Output
voltage
Feedback
resistor
Oscillation
frequency
Pins
OSCI
OSCI
OSCO
OSCI,
OSCO
OSCI,
OSCO
Symbol
LVth
V
IH
V
IL
V
OH
V
OL
RFB
f
Conditions
Feed current where I
OH
= –3.6mA
Pull-in current where I
OL
= 2.4mA
V
IN
= V
DD
d or V
SS
Min.
0.7V
DD
d
V
DD
d – 0.8
500k
20
Typ.
V
DD
d/2
2M
Max.
0.3V
DD
d
0.4
5M
50
Unit
V
V
V
V
V
MHz
Item
Logical Vth
Input
voltage
Input
amplitude
Pins
CKI
Symbol
LVth
V
IH
V
IL
V
IN
Conditions
fmax 50MHz sine wave
Min.
0.7V
DD
d
0.3
Typ.
V
DD
d/2
Max.
0.3V
DD
d
Unit
V
V
V
Vp-p
Item
Rise time
Fall time
Output noise voltage
Symbol
TTLM
TTMH
TTLH
TTML
TTHM
TTHL
VCLH
VCLL
VCMH
VCML
Conditions
VL to VM
VM to VH
VL to VH
VM to VL
VH to VM
VH to VL
Min.
200
200
30
200
200
30
Typ.
350
350
60
350
350
60
Max.
500
500
90
500
500
90
1.0
1.0
1.0
1.0
Unit
ns
ns
ns
ns
ns
ns
V
V
V
V
Inverter Input Characteristics for Base Oscillation Clock Duty Adjustment
(Within the recommended operating conditions)
Note)
Input voltage is the input voltage characteristics for direct input from an external source. Input amplitude
is the input amplitude characteristics in the case of input through a capacitor.
Switching Characteristics
(V
H
= 15.0V, V
M
= GND, V
L
= –7.5V)
Notes)
1. The MOS structure of this IC has a low tolerance for static electricity, so full care should be given for
measures to prevent electrostatic discharge.
2. For noise and latch-up countermeasures, be sure to connect a by-pass capacitor (0.1μF or more)
between each power supply pin (VH, VL) and GND.
3. To protect the CCD image sensor, clamp the SUB pin output at VH before input to the CCD image
sensor.
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