- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378988 > CXK77B1841GB (Sony Corporation) 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) PDF資料下載
參數(shù)資料
| 型號： | CXK77B1841GB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速同步SRAM（256 × 18位）（4分位，寫延遲，LVTTL高速同步靜態(tài)隨機存儲器（256 × 18位）） |
| 文件頁數(shù)： | 19/22頁 |
| 文件大小： | 199K |
| 代理商： | CXK77B1841GB |
256Kx18, Sync LW, LVTTL, rev 4.6
19 / 22
August 12, 1998
SONY
CXK77B1841GB
Bypass Register (1 bit)
The Bypass Register is one bit wide and is connected electrically between TDI and TDO and provides
the minimum length serial path between TDI and TDO.
ID Registers (32 bits)
The ID Register is 32 bits wide and is encoded as follows:
Boundary Scan Register (51 bits)
The Boundary Scan Registers are 51 bits wide and are listed as follows:
K/K, C/C inputs are sampled through one differential stage and internally inverted to generate internal
K/K, C/C signals for scan registers. Place Holder are required for some NC pins to maintain 51 bits Scan
Register for different types of the same family SRAM and for density upgrades. All Place Holder Reg-
isters are connected to V
SS
internally regardless of pin connection externally. TNC register is True No
Connect i.e. not connected internally. TNC register information should be ignored during BSCAN test-
ing.
ID[0}
1
Sony ID
ID[11:1]
0000 1110 001
Part Number
ID[27:12]
0000 0000 0001 1010
Revision Number
ID[31:28]
xxxx
DQ
18
SA
18
SW, SBWx
3
SS, G
2
K, K, C, C
4
ZZ
1
M1, M2
2
Place Holder
2
TNC
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB | High Speed 1MBit Bi-CMOS Synchronous Static RAM(高速1M位、Bi-CMOS同步靜態(tài)RAM) |
| CXK77B3640AGB | 4Mb Late Write HSTL High Speed Synchronous SRAM(128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B1841GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B1841GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B3610AGB-5R | 制造商:Sony Batteries 功能描述:77B3610AGB-5R |
| CXK77B3610GB- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3610GB-6 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。