參數(shù)資料
型號(hào)： CY7C1062AV25-10BGI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 512K x 32 Static RAM
中文描述： 512K X 32 STANDARD SRAM, 10 ns, PBGA119
封裝： 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 278K
代理商： CY7C1062AV25-10BGI
CY7C1062AV25
Document #: 38-05333 Rev. *A
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
Relative to GND
[1]
....–0.5V to +3.6V
DC Voltage Applied to Outputs
in High-Z State
[1]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
.................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
Commercial
Industrial
2.5V
±
0.2V
DC Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Test Conditions
–10
Unit
V
V
V
V
μ
A
μ
A
mA
Min.
2.0
Max.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[1]
Input Leakage Current
Output Leakage Current
V
CC
Operating
Supply Current
Automatic CE Power-down
Current—TTL Inputs
Automatic CE Power-down
Current —CMOS Inputs
V
CC
= Min., I
OH
= –1.0 mA
V
CC
= Min., I
OL
= 1.0 mA
0.4
2.0
–0.3
–1
–1
V
CC
+ 0.3
0.8
+1
+1
275
GND < V
I
< V
CC
GND < V
OUT
< V
CC
, Output Disabled
V
CC
= Max., f = f
MAX
= 1/t
RC
Com’l/Ind’l
I
SB1
Max. V
CC
, CE > V
IH
, V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or V
IN
< 0.2V, f = 0
Com’l/Ind’l
100
mA
I
SB2
Com’l/Ind’l
50
mA
Capacitance
[2]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 2.5V
8
pF
C
OUT
I/O Capacitance
10
pF
AC Test Loads and Waveforms
[3]
Notes:
1. V
(min.) = –2.0V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process changes that may affect these parameters.
3. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
(2.3V). As soon as 1ms (T
power
) after reaching the
minimum operating V
DD
, normal SRAM operation can begin including reduction in V
DD
to the data retention (V
CCDR
, 1.5V) voltage.
90%
10%
2.3V
GND
90%
10%
ALL INPUT PULSES
2.5V
OUTPUT
5 pF
Including
Jig and
Scope
OUTPUT
(a)
(b)
R1 317
167
R2
351
VENIN EQUIVALENT
THé
1.73V
Rise time > 1 V/ns
Fall time:
> 1 V/ns
(c)
OUTPUT
50
Z
0
= 50
V
TH
= V
DD
/2
30 pF
Including all Components
of Test Equipment
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1062AV33-12BGC 512K x 32 Static RAM
CY7C1062AV33-12BGI The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.
CY7C1062AV33-8BGC The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.
CY7C1062AV33-8BGI The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.
CY7C1062AV33-10BGC The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1062AV33-10BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K x 32 Fast Async COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1062AV33-10BGCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K x 32 Fast Async COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1062AV33-10BGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K x 32 Fast Async IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1062AV33-10BGIT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K x 32 Fast Async IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1062AV33-12BGC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 16M-Bit 512K x 32 12ns 119-Pin BGA
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