參數(shù)資料
型號: CY7C1062AV33-10BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: The CY7C1062AV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits.
中文描述: 512K X 32 STANDARD SRAM, 10 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁數(shù): 3/9頁
文件大?。?/td> 188K
代理商: CY7C1062AV33-10BGC
CY7C1062AV33
Document #: 38-05137 Rev. *D
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[1]
....
0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[1]
....................................
0.5V to V
CC
+ 0.5V
DC Electrical Characteristics
Over the Operating Range
DC Input Voltage
[1]
................................
0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Operating Range
AC Test Loads and Waveforms
[3]
Notes:
1.
2.
3.
V
(min.) =
2.0V for pulse durations of less than 20 ns.
Tested initially and after any design or process changes that may affect these parameters.
Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
(3.0V). As soon as 1ms (T
power
) after reaching the
minimum operating V
DD
, normal SRAM operation can begin including reduction in V
DD
to the data retention (V
CCDR
, 2.0V) voltage.
Range
Ambient
Temperature
0
°
C to +70
°
C
40
°
C to +85
°
C
V
CC
Commercial
Industrial
3.3V
±
0.3V
Parameter
V
OH
Description
Test Conditions
-8
-10
-12
Unit
V
Min.
2.4
Max.
Min.
2.4
Max.
Min.
2.4
Max.
Output HIGH Voltage
V
CC
= Min.,
I
OH
=
4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
V
OL
Output LOW Voltage
0.4
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
V
V
IL
I
IX
I
OZ
Input LOW Voltage
[1]
Input Load Current
Output Leakage Current
0.3
1
1
0.3
1
1
0.3
1
1
V
μ
A
μ
A
GND < V
I
< V
CC
GND < V
OUT
< V
CC
, Output
Disabled
V
CC
= Max., f = f
MAX
= 1/t
RC
I
CC
V
CC
Operating
Supply Current
Com
l
Ind
l
300
300
70
275
275
70
260
260
70
mA
mA
mA
I
SB1
Automatic CE
Power-down Current
TTL Inputs
Automatic CE
Power-down Current
CMOS Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
0.3V,
V
IN
> V
CC
0.3V,
or V
IN
< 0.3V, f = 0
I
SB2
Com
l/Ind
l
50
50
50
mA
Capacitance
[2]
Parameter
Description
Test Conditions
Max.
8
10
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
I/O Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 3.3V
90%
10%
3.3V
GND
90%
10%
ALL INPUT PULSES
3.3V
OUTPUT
5 pF
Including
Jig and
Scope
OUTPUT
(a)
(b)
R1 317
167
R2
351
VENIN EQUIVALENT
TH
é
1.73V
Rise time > 1 V/ns
Fall time:
> 1 V/ns
(c)
OUTPUT
50
Z
0
= 50
V
TH
= 1.5V
30 pF
Including all Components
of Test Equipment
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CY7C1062AV33-10BGI 功能描述:靜態(tài)隨機存取存儲器 512K x 32 Fast Async IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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