參數(shù)資料
型號(hào)： CY7C1069AV33-10BAC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 2M x 8 Static RAM
中文描述： 2M X 8 STANDARD SRAM, 10 ns, PBGA60
封裝： 8 X 20 MM, 1.20 MM HEIGHT, FBGA-60
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 460K
代理商： CY7C1069AV33-10BAC
CY7C1069AV33
Document #: 38-05255 Rev. *G
Page 4
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55
°C to +125°C
Supply Voltage on VCC to Relative GND[3].....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[3].................................... –0.5V to VCC + 0.5V
DC Input Voltage[3] ................................ –0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
3.3V
± 0.3V
Industrial
–40
°C to +85°C
Notes
3. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
–10
–12
Unit
Min
Max
Min
Max
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
VCC + 0.3
2.0
VCC + 0.3
V
VIL
Input LOW Voltage[3]
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
–1
+1
μA
IOZ
Output Leakage Current GND < VOUT < VCC, Output Disabled
–1
+1
–1
+1
μA
ICC
VCC Operating
Supply Current
VCC = Max.,
f = fMAX = 1/tRC
275
260
mA
ISB1
Automatic CE
Power Down Current
—TTL Inputs
CE2 < VIL,
Max. VCC, CE1 > VIH
VIN > VIH or VIN < VIL, f = fMAX
70
mA
ISB2
Automatic CE
Power Down Current
—CMOS Inputs
CE2 < 0.3V, Max. VCC,
CE1> VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
50
mA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.[4]
Parameter
Description
Test Conditions
TSOP II
FBGA
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = 3.3V
6
8
pF
COUT
I/O Capacitance
8
10
pF
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參數(shù)描述
CY7C1069AV33-10BAI 制造商:Cypress Semiconductor 功能描述:
CY7C1069AV33-10ZC 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
CY7C1069AV33-10ZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 8 CPG COM Fast Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1069AV33-10ZXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 8 CPG COM Fast Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1069AV33-10ZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 8 CPG IND Fast Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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