- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295374 > CY7C1168V18-333BZXC (CYPRESS SEMICONDUCTOR CORP) 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) PDF資料下載
參數(shù)資料
| 型號： | CY7C1168V18-333BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| 中文描述： | 1M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 2/27頁 |
| 文件大小： | 648K |
| 代理商： | CY7C1168V18-333BZXC |
第1頁當(dāng)前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
Document Number: 001-06620 Rev. *D
Page 10 of 27
Write Cycle Descriptions
BWS0/
NWS0
BWS1/
NWS1
K
Comments
L
L–H
–
During the Data portion of a write sequence
:
CY7C1166V18
both nibbles (D
[7:0]) are written into the device.
CY7C1168V18
both bytes (D
[17:0]) are written into the device.
L
–
L-H During the Data portion of a write sequence
:
CY7C1166V18
both nibbles (D
[7:0]) are written into the device.
CY7C1168V18
both bytes (D
[17:0]) are written into the device.
L
H
L–H
–
During the Data portion of a write sequence
:
CY7C1166V18
only the lower nibble (D
[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1168V18
only the lower byte (D
[8:0]) is written into the device, D[17:9] remains unaltered.
L
H
–
L–H During the Data portion of a write sequence
:
CY7C1166V18
only the lower nibble (D
[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1168V18
only the lower byte (D
[8:0]) is written into the device, D[17:9] remains unaltered.
H
L
L–H
–
During the Data portion of a write sequence
:
CY7C1166V18
only the upper nibble (D
[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1168V18
only the upper byte (D
[17:9]) is written into the device, D[8:0] remains unaltered.
H
L
–
L–H During the Data portion of a write sequence
:
CY7C1166V18
only the upper nibble (D
[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1168V18
only the upper byte (D
[17:9]) is written into the device, D[8:0] remains unaltered.
H
L–H
–
No data is written into the devices during this portion of a write operation.
H
–
L–H No data is written into the devices during this portion of a write operation.
BWS0
K
Comments
L
L-H
–
During the Data portion of a Write sequence
, the single byte (D
[8:0]) is written into the device.
L
–
L-H
During the Data portion of a Write sequence
, the single byte (D
) is written into the device.
H
L-H
–
No data is written into the device during this portion of a Write operation.
H
–
L-H
No data is written into the device during this portion of a Write operation.
Note
8. Is based on a write cycle was initiated in accordance with the Write Cycle Description Truth Table. Alter NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 on different
portions of a write cycle, as long as the setup and hold requirements are achieved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1168V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18-300BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1168V18-375BZC | 功能描述:靜態(tài)隨機存取存儲器 18M Q2+ B2 (2.5) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1168V18-375BZXC | 功能描述:靜態(tài)隨機存取存儲器 18M Q2+, B2 (2.5) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1168V18-400BZC | 功能描述:靜態(tài)隨機存取存儲器 18M Q2+, B2 (2.5) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1168V18-400BZCES | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1168V18-400BZXC | 功能描述:靜態(tài)隨機存取存儲器 18M Q2+, B2 (2.5) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。