型號: | CY7C1177V18-300BZI |
廠商: | CYPRESS SEMICONDUCTOR CORP |
元件分類: | SRAM |
英文描述: | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
中文描述: | 2M X 9 DDR SRAM, 0.45 ns, PBGA165 |
封裝: | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
文件頁數(shù): | 16/27頁 |
文件大?。?/td> | 648K |
代理商: | CY7C1177V18-300BZI |
相關(guān)PDF資料 |
PDF描述 |
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CY7C1177V18-300BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
CY7C1177V18-300BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
CY7C1177V18-333BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
CY7C1177V18-333BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
CY7C1177V18-333BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
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