參數(shù)資料
型號(hào)： CY7C1413BV18
廠商： Cypress Semiconductor Corp.
英文描述： 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
中文描述： 36兆位的國(guó)防評(píng)估報(bào)告⑩- II SRAM的4字突發(fā)結(jié)構(gòu)
文件頁(yè)數(shù)： 11/28頁(yè)
文件大?。?/td> 1644K
代理商： CY7C1413BV18
PRELIMINARY
CY7C1411BV18
CY7C1426BV18
CY7C1413BV18
CY7C1415BV18
Document Number: 001-07037 Rev. *B
Page 11 of 28
Write Cycle Descriptions
[2, 10]
(CY7C1415BV18)
BWS
0
BWS
1
BWS
2
BWS
3
L
L
K
K
Comments
L
L
L–H
–
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are written
into the device.
L
L
L
L
–
L–H
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are written
into the device.
L
H
H
H
L–H
–
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is written
into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is written
into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is written into
the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is written into
the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is written
into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is written
into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written
into the device. D
[26:0]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written
into the device. D
[26:0]
will remain unaltered.
No data is written into the device during this portion of a write operation.
L
H
H
H
–
L–H
H
L
H
H
L–H
–
H
L
H
H
–
L–H
H
H
L
H
L–H
–
H
H
L
H
–
L–H
H
H
H
L
L–H
H
H
H
L
–
L–H
H
H
H
H
L–H
–
H
H
H
H
–
L–H
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
[2, 10]
(CY7C1426BV18)
BWS
0
L
K
K
Comments
L–H
–
During the Data portion of a Write sequence, the single byte (D
[8:0]
) is written into the device.
During the Data portion of a Write sequence, the single byte (D
[8:0]
) is written into the device.
No data is written into the device during this portion of a write operation.
L
–
L–H
H
L–H
–
H
–
L–H
No data is written into the device during this portion of a write operation.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1413BV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1413BV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1413JV18-200BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR-II BURST 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1413JV18-250BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR-II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1413JV18-250BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36-Mbit QDR 靜態(tài)隨機(jī)存取存儲(chǔ)器 4-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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