參數(shù)資料
型號： CY7C1442AV25-200BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 2M X 18 CACHE SRAM, 3.2 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165
文件頁數(shù)： 14/32頁
文件大小： 4264K
代理商： CY7C1442AV25-200BZC
CY7C1440AV25
CY7C1442AV25
CY7C1446AV25
Document #: 38-05350 Rev. *E
Page 21 of 32
Switching Characteristics Over the Operating Range[23, 24]
Parameter
Description
–250
–200
–167
Unit
Min.
Max.
Min.
Max.
Min.
Max.
tPOWER
VDD(Typical) to the first Access
[19]
11
1ms
Clock
tCYC
Clock Cycle Time
4.0
5.0
6.0
ns
tCH
Clock HIGH
1.5
2.0
2.4
ns
tCL
Clock LOW
1.5
2.0
2.4
ns
Output Times
tCO
Data Output Valid After CLK Rise
2.6
3.2
3.4
ns
tDOH
Data Output Hold After CLK Rise
1.0
1.5
ns
tCLZ
Clock to Low-Z[20, 21, 22]
1.0
1.3
1.5
ns
tCHZ
Clock to High-Z[20, 21, 22]
2.6
3.0
3.4
ns
tOEV
OE LOW to Output Valid
2.6
3.0
3.4
ns
tOELZ
OE LOW to Output Low-Z[20, 21, 22]
00
0
ns
tOEHZ
OE HIGH to Output High-Z[20, 21, 22]
2.6
3.0
3.4
ns
Set-up Times
tAS
Address Set-up Before CLK Rise
1.2
1.4
1.5
ns
tADS
ADSC, ADSP Set-up Before CLK Rise
1.2
1.4
1.5
ns
tADVS
ADV Set-up Before CLK Rise
1.2
1.4
1.5
ns
tWES
GW, BWE, BWX Set-up Before CLK Rise
1.2
1.4
1.5
ns
tDS
Data Input Set-up Before CLK Rise
1.2
1.4
1.5
ns
tCES
Chip Enable Set-Up Before CLK Rise
1.2
1.4
1.5
ns
Hold Times
tAH
Address Hold After CLK Rise
0.3
0.4
0.5
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.3
0.4
0.5
ns
tADVH
ADV Hold After CLK Rise
0.3
0.4
0.5
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.3
0.4
0.5
ns
tDH
Data Input Hold After CLK Rise
0.3
0.4
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.3
0.4
0.5
ns
Notes:
19. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD( minimum) initially before a read or write operation
can be initiated.
20. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
21. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
22. This parameter is sampled and not 100% tested.
23. Timing reference level is 1.25V when VDDQ = 2.5V and 0.9V when VDDQ = 1.8V .
24. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
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