參數(shù)資料
型號： CY7C1470V25-167AXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
中文描述： 2M X 36 ZBT SRAM, 3.4 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
文件頁數(shù)： 14/27頁
文件大?。?/td> 382K
代理商： CY7C1470V25-167AXC
PRELIMINARY
CY7C1470V25
CY7C1472V25
CY7C1474V25
Document #: 38-05290 Rev. *E
Page 14 of 27
Scan Register Sizes
Boundary Scan Exit Order (x36)
Register Name
Bit Size (x36)
3
1
32
71
–
Bit Size (x18)
3
1
32
52
–
Bit Size (x72)
3
1
32
–
110
Instruction
Bypass
ID
Boundary Scan Order–165FBGA
Boundary Scan Order–209BGA
Identification Codes
Instruction
EXTEST
Code
000
Description
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload function
and is therefore not 1149.1-compliant.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM opera-
tions.
IDCODE
001
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
Bit #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
165-Ball ID
C1
D1
E1
D2
E2
F1
G1
F2
G2
J1
K1
L1
J2
M1
N1
K2
L2
M2
R1
R2
R3
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
P2
R4
P6
R6
N6
P11
R8
P3
P4
P8
P9
P10
R9
R10
R11
N11
M11
L11
M10
L10
K11
Boundary Scan Exit Order (x36)
(continued)
Bit #
165-Ball ID
相關PDF資料
PDF描述
CY7C1470V33-167AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1470V33-250BZXC ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
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相關代理商/技術參數(shù)
參數(shù)描述
CY7C1470V25-167AXCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 2.5V 72MBIT 2MX36 3.4NS 100TQFP - Bulk
CY7C1470V25-167AXCT 功能描述:靜態(tài)隨機存取存儲器 2Mx36 2.5V NoBL PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1470V25-167BZC 功能描述:靜態(tài)隨機存取存儲器 72MB (2Mx36) 2.5v 167MHz 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1470V25-167BZCT 功能描述:靜態(tài)隨機存取存儲器 2Mx36 2.5V NoBL PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1470V25-167BZI 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 2.5V 72MBIT 2MX36 3.4NS 165FBGA - Bulk
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