- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295376 > CY7C166-15VC (CYPRESS SEMICONDUCTOR CORP) 16K x 4 Static RAM PDF資料下載
參數(shù)資料
| 型號： | CY7C166-15VC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 16K x 4 Static RAM |
| 中文描述： | 16K X 4 STANDARD SRAM, 15 ns, PDSO24 |
| 封裝： | 0.300 INCH, MO-088, SOJ-24 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 525K |
| 代理商： | CY7C166-15VC |
CY7C166
Document #: 38-05025 Rev. *C
Page 4 of 12
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential ...............–0.5 V to +7.0 V
DC voltage applied to outputs
in high Z State[1] ...........................................–0.5 V to +7.0 V
DC input voltage[1]........................................–0.5 V to +7.0 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0 °C to +70 °C
5 V
10%
Electrical Characteristics
Over the Operating Range
–15
Parameter
Description
Test Conditions
Min
Max
Unit
VOH
Output HIGH voltage
VCC = Min, IOH = –4.0 mA
2.4
–
V
VOL
Output LOW voltage
VCC = Min, IOL = 8.0 mA
–
0.4
V
VIH
Input HIGH voltage
2.2
VCC
V
VIL
Input LOW voltage[1]
–0.5
0.8
V
IIX
Input leakage current
GND < VI < VCC
–5
+5
A
IOZ
Output leakage current
GND < VO < VCC, output disabled
–5
+5
A
ICC
VCC operating supply current
VCC = Max, IOUT = 0 mA
–
115
mA
ISB1
Automatic CE
power-down current[2]
Max VCC, CE > VIH,
Min Duty Cycle = 100%
–
40
mA
ISB2
Automatic CE
power-down current[2]
Max VCC, CE > VCC – 0.3 V,
VIN > VCC – 0.3 V or VIN < 0.3 V
–
20
mA
Capacitance[3]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input capacitance
TA = 25 °C, f = 1 MHz,
VCC = 5.0 V
10
pF
COUT
Output capacitance
10
pF
Notes
1. Minimum voltage is equal to –3.0 V for pulse durations less than 30 ns.
2. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
3. Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C166 | 16K x 4 Static RAM |
| CY7C199-35VIT | 32K X 8 STANDARD SRAM, 35 ns, PDSO28 |
| CY7C276-25QMB | x16 EPROM |
| CY7C276-30HC | EPROM|16KX16|CMOS|LDCC|44PIN|CERAMIC |
| CY7C276-30HMB | x16 EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C166-15VCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C16620DC | 制造商:CYPRESS 功能描述:* |
| CY7C166-20PC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C166-20VC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C16620VCT | 制造商:CYPRESS 功能描述:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。