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參數(shù)資料
| 型號(hào)： | D1003UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(60W-28V-175MHz,單端)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（60瓦- 28V的- 175MHz時(shí)，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（60瓦- 28V的- 175MHz時(shí)，單端）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 39K |
| 代理商： | D1003UK |
D1003UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
117W
70V
±20V
15A
–65 to 150°C
200°C
MECHANICAL DATA
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 16 dB MINIMUM
DM
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17 Dia.
5.71
12.7 Dia.
6.60
0.13
4.32
3.17
26.16
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
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PDF描述 |
|---|---|
| D1003UK | METAL GATE RF SILICON FET |
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| D1004UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端)) |
| D1004 | METAL GATE RF SILICON FET |
| D1004UK | METAL GATE RF SILICON FET |
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