參數(shù)資料
型號: D1003UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CERAMIC, DM, 4 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 39K
代理商: D1003UK
D1003UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
20
30
40
50
60
70
80
%
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
Pout
W
10
Drain Efficiency
Pin W
Pout
Drain Efficiency
0
20
40
60
80
100
120
140
Pout
W
0
1
2
3
4
5
6
7
8
Pin W
Pout
Gain
10
11
12
13
14
15
16
17
Gain
dB
Figure 1 – Power Output and Efficiency
vs. Power Input.
Figure 2 – Power Output & Gain
vs. Power Input.
0
20
40
60
80
100
120
Pout W PEP
-50
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
Idq = 0.3A
Idq = 2A
Figure 3 – IMD vs. Output Power.
D1003UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
Z
S
Z
L
2.0 – j4.3 3.7 – j4.5
!Freq
MHz
70
100
150
200
250
300
350
400
450
500
S11
mag
0.83 -156.8
0.87 -163.3
0.91 -171.0
0.93 -177.6
0.95
0.97
0.96
0.98
0.98
0.97
S21
mag
6.9
4.3
2.3
1.4
0.9
0.7
0.5
0.4
0.3
0.3
S12
mag
0.018
0.012
0.007
0.013
0.022
0.032
0.039
0.048
0.053
0.064
S22
mag
0.65 -137.0
0.75 -147.2
0.84 -159.7
0.90 -168.8
0.93 -175.0
0.95
0.96
0.98
0.98
0.97
ang
ang
59.9
46.9
31.5
22.6
14.3
10.5
4.0
3.9
2.9
2.1
ang
-16.7
-15.5
37.1
81.0
86.6
86.9
80.0
80.0
77.5
74.8
ang
177.6
173.6
168.6
165.0
161.9
159.3
179.5
175.3
172.0
169.8
166.5
!
#
V
DS
= 28V, I
DQ
= 0.3A
MHZ
S MA R 50
Typical S Parameters
V
DS
= 28V
I
DQ
= 0.3A
f = 175MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
V
DS
= 28V
I
DQ
= 0.3A
f = 175MHz
相關(guān)PDF資料
PDF描述
D10040200GT Product Specification
D1004UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端))
D1004 METAL GATE RF SILICON FET
D1004UK METAL GATE RF SILICON FET
D1005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-175MHz,單端))
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