參數(shù)資料
型號: D2012UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-28V-1GHz,單端式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管(10W的- 28V的- 1GHz的,單端)(鍍金多用的DMOS射頻硅場效應(yīng)管(10W的- 28V的- 1GHz的,單端式))
文件頁數(shù): 4/4頁
文件大?。?/td> 53K
代理商: D2012UK
D2012UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
!
"
1GHz Test Fixture
Substrate 0.8mm PTFE/glass, Er = 2.5
All microstrip lines W = 2.2mm
T1 35mm
T2 15mm
T3 4mm
T4 14mm
T5 32mm
L1 7.5 turns 24swg enamelled copper wire, 3mm i.d.
L2 1.5 turns 24swg enamelled copper wire on ferrite core
相關(guān)PDF資料
PDF描述
D2012UK METAL GATE RF SILICON FET
D2012 Si NPN TRANSISTOR
D2013UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-1GHz,推拉式))
D2013 METAL GATE RF SILICON FET
D2013UK METAL GATE RF SILICON FET
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