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參數(shù)資料
| 型號(hào)： | D640G12VE |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存 |
| 文件頁數(shù)： | 55/56頁 |
| 文件大?。?/td> | 742K |
| 代理商： | D640G12VE |
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June 6, 2005
Am29DL640G
53
REVISION SUMMARY
Revision A (November 7, 2001)
Initial release.
Revision A+1 (April 15, 2002)
Global
Changed data sheet status from Advance Information
to Preliminary.
Ordering Information
Changed package marking for Fortified BGA (ordering
designator is PC).
Revision A+2 (June 7, 2002)
Global
Added 65 ns speed option.
Revision B (September 13, 2002)
Global
Removed Preliminary designation from data sheet.
Revision B+1 (October 21, 2002)
Connection Diagrams
On 64-ball Fortified BGA package, changed first row
and last row to NC in pin diagram.
On 48-ball Fine-pitch BGA package, applied note with
asterisk to top left hand NC balls.
Special Handling Instructions
Changed wording to include TSOP and BGA pack-
ages.
Ordering Information
Removed FBGA designation from the PC and WH
package type.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the A
CC
function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI func-
tions are unavailable when a program or erase opera-
tion is in progress.
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Changed CFI website address.
Command Definitions
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.”
to...”may place the device to an unknown state. A reset
command is then required to return the device to read-
ing array data.”
Table 12. Am29DL640G Command Definitions
Changed the first address of the unlock bypass reset
command sequence from BA to XXX.
CMOS Compatible
Added I
LR
parameter to table.
Deleted I
ACC
parameter from table.
AC Characteristics and Read-Only Operations
Changed the Chip Enable to Output High Z and Out-
put Enable to Output High Z Speed Options from 30
ns to 16 ns.
Word/Byte Configuration
Changed BYTE# Switching Low to Output High Z
Speed Options from 30 ns to 16 ns.
TSOP Pin Capacitance
Changed all typicals and maximums in table.
Added fine-pitch BGA capacitance.
Global
Removed 65 ns speed option.
Revision B+2 (November 11, 2002)
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D640G12VI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G70PI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G70VI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G90PI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G90VI | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D640G12VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G70PI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G70VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G90PI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| D640G90VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
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