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參數(shù)資料
| 型號(hào)： | DAC8420QBC |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | DAC |
| 英文描述： | Quad 12-Bit Serial Voltage Output DAC |
| 中文描述： | QUAD, SERIAL INPUT LOADING, 13 us SETTLING TIME, 12-BIT DAC, UUC16 |
| 封裝： | 0.119 X 0.283 INCH, DIE-16 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 587K |
| 代理商： | DAC8420QBC |
DAC8420
REV. 0
–4–
WAFER TEST LIMITS
DAC8420G
Limit
Parameter
Symbol
Conditions
Units
Integral Linearity
Differential Linearity
Min-Scale Offset
Max-Scale Offset
Logic Input High Voltage
Logic Input Low Voltage
Logic Input Current
Positive Supply Current
Negative Supply Current
INL
DNL
±
1
±
1
±
1
±
1
2.4
0.8
1
8
7
LSB max
LSB max
LSB max
LSB max
V min
V max
μ
A max
mA max
mA max
V
INH
V
INL
I
IN
I
DD
I
SS
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
°
C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18.0 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V, –18.0 V
V
SS
to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +36.0 V
V
SS
to V
VREFLO
. . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
SS
– 2.0 V
V
VREFHI
to V
VREFLO
. . . . . . . . . . . . . . . . . . . +2.0 V, V
DD
– V
SS
V
VREFHI
to V
DD
. . . . . . . . . . . . . . . . . . . . . . . +2.0 V, +33.0 V
I
VREFHI
, I
VREFLO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Digital Input Voltage to GND . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Operating Temperature Range
EP, FP, ES, FS, EQ, FQ . . . . . . . . . . . . . . –40
°
C to +85
°
C
Dice Junction Temperature . . . . . . . . . . . . . . . . . . . . . +150
°
C
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 mW
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300
°
C
Thermal Resistance
θ
JA
Package Type
θ
JC
Units
16-Pin Plastic DIP (P)
16-Pin Hermetic DIP (Q)
16-Lead Small Outline
Surface Mount (S)
70
1
82
1
27
9
°
C/W
°
C/W
86
2
22
°
C/W
NOTES
1
θ
JA
is specified for worst case mounting conditions, i.e.,
θ
JA
is specified for
device in socket.
2
θ
JA
is specified for device on board.
CAUTION
1. Stresses above those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation at or above this
specification is not implied. Exposure to the above maximum
rating conditions for extended periods may affect device
reliability.
2. Digital inputs and outputs are protected, however, permanent
damage may occur on unprotected units from high-energy
electrostatic fields. Keep units in conductive foam or packaging
at all times until ready to use. Use proper antistatic handling
procedures.
3. Remove power before inserting or removing units from their
sockets.
4. Analog Outputs are protected from short circuits to ground
or either supply.
DICE CHARACTERISTICS
10
SDI
9
GND
8
VSS
7
VOUTA
CLR
15
CLSEL
16
(SUBSTRATE)
V1
VOUTD
2
VOUTC 3
VREFLO 4
VREFHI 5
VOUTB 6
11 CLK
12 CS
14 LD
13 NC
NC = NO CONNECT
Die Size 0.119
×
0.283 inch, 33,677 sq. mils
(3.023
×
7.188 mm, 21.73 sq. mm)
Transistor Count 2,207
For additional DICE ordering information, refer to databook.
(at V
DD
= +15.0 V, V
SS
= –15.0 V, V
REFHI
= +10.0 V, V
REFLO
= –10.0 V, T
A
= +25
8
C
unless otherwise noted)
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