參數(shù)資料
型號： DAC8512GBC
廠商： ANALOG DEVICES INC
元件分類： DAC
英文描述： % V, Serial Input Complete 12-Bit DAC
中文描述： SERIAL INPUT LOADING, 16 us SETTLING TIME, 12-BIT DAC, UUC8
封裝： DIE-8
文件頁數(shù)： 3/20頁
文件大?。?/td> 757K
代理商： DAC8512GBC
REV. A
–3–
DAC8512
WAFER TEST LIMITS
(@ V
DD
= +5.0 V
6
5%, T
A
= +25
8
C, applies to part number DAC8512GBC only, unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Units
STATIC PERFORMANCE
Relative Accuracy
Differential Nonlinearity
Zero-Scale Error
Full-Scale Voltage
LOGIC INPUTS
Logic Input Low Voltage
Logic Input High Voltage
Input Leakage Current
SUPPLY CHARACTERISTICS
Positive Supply Current
INL
DNL
V
ZSE
V
FS
–2
–1
±
3/4
±
0.7
+1/2
4.095
+2
+1
+3
4.105
LSB
LSB
LSB
V
No Missing Codes
Data = 000
H
Data = FFF
H
4.085
V
IL
V
IH
I
IL
0.8
V
V
μ
A
2.4
10
I
DD
V
IH
= 2.4 V, V
IL
= 0.8 V, No Load
V
DD
= 5 V, V
IL
= 0 V, No Load
V
IH
= 2.4 V, V
IL
= 0.8 V, No Load
V
DD
= 5 V, V
IL
= 0 V, No Load
V
DD
=
±
5%
1.5
0.5
7.5
2.5
0.002
2.5
1
12.5
5
0.004
mA
mA
mW
mW
%/%
Power Dissipation
P
DISS
Power Supply Sensitivity
PSS
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS*
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +10 V
Logic Inputs to GND . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
V
OUT
to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
I
OUT
Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . . 50 mA
Package Power Dissipation . . . . . . . . . . . . . .(T
J
max – T
A
)/
θ
JA
Thermal Resistance
θ
JA
8-Pin Plastic DIP Package (P) . . . . . . . . . . . . . . . . 103
°
C/W
8-Lead SOIC Package (S) . . . . . . . . . . . . . . . . . . . 158
°
C/W
Maximum Junction Temperature (T
J
max) . . . . . . . . . +150
°
C
Operating Temperature Range . . . . . . . . . . . . .–40
°
C to +85
°
C
Storage Temperature Range . . . . . . . . . . . . .–65
°
C to +150
°
C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300
°
C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability .
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the DAC8512 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
INL
(LSB) Range
Temperature
Package
Description
Package
Option
Model
DAC8512EP
DAC8512FP
DAC8512FS
DAC8512GBC
±
2
±
1
±
2
±
2
–40
°
C to +85
°
C 8-Pin P-DIP
–40
°
C to +85
°
C 8-Pin P-DIP
–40
°
C to +85
°
C 8-Lead SOIC SO-8
+25
°
C
Dice
N-8
N-8
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