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參數(shù)資料
| 型號： | DBDD600S65K1 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 108K |
| 代理商： | DBDD600S65K1 |
Technische Information / Technical Information
DD 600 S 65 K1
Dioden-Module
Diode-Modules
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
T
vj
=125°C
T
vj
=25°C
T
vj
=-40°C
V
CES
6500
6300
5800
V
Dauergleichstrom
DC forward current
I
F
600
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
1200
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
165
k A
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
10,2
kV
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q
PD
typ. 10pC (acc. To IEC 1287)
V
ISOL
5,1
kV
Charakteristische Werte / Characteristic values
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 600A, T
vj
= 25°C
V
F
3,0
3,8
4,6
V
I
F
= 600A, T
vj
= 125°C
3,9
4,7
V
Sperrstrom
reverse current
V
R
= 6300V, T
vj
= 25°C
I
R
-
0,2
-
mA
V
R
= 6500V, T
vj
= 125°C
-
20
-
mA
Rückstromspitze
peak reverse recovery current
I
F
= 600A, - di
F
/dt = 2000A/μs
V
R
= 3600V, T
vj
= 25°C
I
RM
-
800
-
A
V
R
= 3600V, T
vj
= 125°C
-
1000
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 600A, - di
F
/dt = 2000A/μs
V
R
= 3600V, T
vj
= 25°C
Q
r
-
550
-
μC
V
R
= 3600V, T
vj
= 125°C
-
1050
-
μC
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 600A, - di
F
/dt = 2000A/μs
V
R
= 3600V, T
vj
= 25°C
E
rec
-
660
-
mJ
V
R
= 3600V, T
vj
= 125°C
-
1600
-
mJ
Modulinduktivitt
stray inductance module
pro Zweig / per arm
L
sCE
-
25
-
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
R
CC′+EE′
-
0,37
-
m
prepared by: Dr. Oliver Schilling
date of publication: 2002-07-05
approved by: Dr. Schütze 2002-07-05
revision/Status: Series 1
1
DD 600 S65 K1 (final 1).xls
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