參數(shù)資料
型號： DG2015DN-T1-E4
廠商： Vishay Siliconix
文件頁數(shù)： 2/8頁
文件大?。?/td> 0K
描述： IC SWITCH DUAL DPDT 16QFN
標(biāo)準(zhǔn)包裝： 2,500
功能： 開關(guān)
電路： 2 x DPDT - NC/NO
導(dǎo)通狀態(tài)電阻： 1.6 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 3.3 V
電流 - 電源： 1µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 16-VQFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 16-QFN（4x4）
包裝： 帶卷 (TR)
www.vishay.com
2
Document Number: 71971
S13-1282-Rev. D, 27-May-13
Vishay Siliconix
DG2015
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Current (Any terminal except NO, NC or COM)
30
mA
Continuous Current (NO, NC, or COM)
± 150
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature (D Suffix)
- 65 to 150
°C
Package Solder Reflow Conditionsd
16-pin QFN (4 mm x 4 mm)
240
Power Dissipation (Packages)b
QFN-16c
1880
mW
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 2 V
e
Limits
- 40 °C to 85 °C
Unit
Parameter
Symbol
Temp.a
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
Room
Full
0.85
1.6
1.7
RON Flatness
RON
Flatness
V+ = 2.7 V, VCOM = 0 V to V+, INO, INC = 100 mA
Room
0.16
RON Match
R
ON
Room
0.15
Switch Off
Leakage Current
INO(off)
INC(off)
V+ = 3.3 V
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
Room
Full
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 10
1
10
Channel-On
Leakage Current
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltage
VINH
Full
2
V
Input Low Voltage
VINL
Full
0.4
Input Capacitance
Cin
Full
4
pF
Input Current
IINL or IINH
VIN = 0 V or V+
Full
- 1
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2 V, RL = 300 , CL = 35 pF
Room
Full
40
65
67
ns
Turn-Off Time
tOFF
Room
Full
35
60
62
Break-Before-Make Time
td
Full
1
3
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0
Room
7
pC
Off-Isolationd
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 67
dB
Crosstalkd
XTALK
Room
- 70
NO, NC Off Capacitance
d
CNO(off)
VIN = 0 V or V+, f = 1 MHz
Room
63
pF
CNC(off)
Room
67
Channel-On Capacitanced
CNO(on)
Room
200
CNC(on
Room
196
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