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參數(shù)資料
| 型號(hào)： | DG536DN-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC AMP/VIDEO/MUX LP 2CH 44PLCC |
| 標(biāo)準(zhǔn)包裝： | 300 |
| 功能： | 視頻多路復(fù)用器 |
| 電路： | 1 x 16:1 |
| 導(dǎo)通狀態(tài)電阻： | 90 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 7.5 V ~ 18 V |
| 電流 - 電源： | 5µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 44-LCC（J 形引線(xiàn)） |
| 供應(yīng)商設(shè)備封裝： | 44-PLCC（16.59x16.59） |
| 包裝： | 管件 |
www.vishay.com
4
Document Number: 70070
S-71241–Rev. E, 25-Jun-07
Vishay Siliconix
DG535/536
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VA = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, ST, CS = 10.5 V
CS = 4.5 V, VA = 4.5 or 10.5 V
f
Tempb
Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit
Minc
Maxc
Minc
Maxc
Power Supplies
Positive Supply Current
I+
Any One Channge I Selected with All
Logic Inputs at GND or V+
Room
Full
550
100
50
100
A
Supply Voltage Range
V+
Full
10
16.5
10
16.5
V
Minimum Input Timing Requirements
Strobe Pulse Width
tSW
See Figure 1
Full
200
ns
A0, A1, A2, A3 CS, CS, EN
Data Valid to Strobe
tDW
Full
100
A0, A1, A2, A3 CS, CS, EN
Data Valid after Strobe
tWD
Full
50
rDS(on) vs. VD and Temperature
VD – Drain Voltage (V)
r DS(on)
–
Dr
ain-Source
On-Resistance
(Ω
)
400
360
280
80
0
010
320
240
40
120
200
160
8
6
4
2
V+ = +15 V
GND = 0 V
125 °C
25 °C
- 55 °C
rDS(on) vs. VD and Power Supply Voltage
VD – Drain Voltage (V)
r DS(on)
–
Dr
ain-Source
On-Resistance
(Ω
)
300
270
210
60
0
010
240
180
30
90
150
120
8
6
4
2
GND = 0 V
TA = 25 °C
8 V
12 V
15 V
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