參數(shù)資料
型號: DL323
廠商: Spansion Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 31/58頁
文件大?。?/td> 875K
代理商: DL323
December4,2006 25686B10
Am29DL32xG
29
D A T A S H E E T
Table 14.
Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
Unless otherwise noted, address bits A20–A11 are don’t cares.
No unlock or command cycles required when bank is reading
array data.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a bank is in the autoselect mode, or if DQ5 goes high (while
the bank is providing status information).
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or Secured Silicon Sector factory
protect information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence
section for more information.
4.
5.
6.
7.
8.
9.
10. The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to the
read mode when the bank is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
The data is 82h for factory locked and 02h for not factory locked.
15. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
Data
RD
F0
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
A
Manufacturer ID
Word
Byte
Word
Byte
Word
4
AA
2AA
555
2AA
555
2AA
55
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
90
(BA)X00
01
Device ID
4
AA
55
90
(BA)X01
(BA)X02
(BA)X03
(see
Table 7
)
Secured Silicon Sector
Factory Protect (Note
9)
Sector/Sector Block
Protect Verify
(Note 10)
Enter Secured Silicon
Sector Region
4
AA
55
90
82/02
Byte
AAA
555
(BA)AAA
(BA)X06
Word
4
555
AA
2AA
55
(BA)555
90
(SA)X02
00/01
Byte
AAA
555
(BA)AAA
(SA)X04
Word
Byte
Word
Byte
Word
Byte
Word
Byte
3
555
AAA
555
AAA
555
AAA
555
AAA
XXX
AA
2AA
555
2AA
555
2AA
555
2AA
555
PA
55
555
AAA
555
AAA
555
AAA
555
AAA
88
Exit Secured Silicon Sector
Region
4
AA
55
90
XXX
00
Program
4
AA
55
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program (Note 11)
2
2
A0
PD
Unlock Bypass Reset (Note 12)
BA
555
AAA
555
AAA
BA
BA
55
AA
90
XXX
2AA
555
2AA
555
00
Chip Erase
Word
Byte
Word
Byte
6
AA
55
555
AAA
555
AAA
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend (Note 13)
Erase Resume (Note 14)
1
1
B0
30
CFI Query (Note 15)
Word
Byte
1
98
相關PDF資料
PDF描述
DL324 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DL4001 1 Amp Glass Passivated Rectifier 50 to 1000 Volts
DL4007 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
DL4001 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
DL4002 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
相關代理商/技術參數(shù)
參數(shù)描述
DL324 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
DL-3247-165 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:RED LASER DIODE
DL3-2-J/S 制造商:ITT Interconnect Solutions 功能描述:249-2060-001
DL33 制造商:Pentair Technical Products / Hoffman 功能描述:6.5mm Triangle Insert Latch Ki , fits DL Inst Box, Steel
D-L33 制造商:Pentair Technical Products / Hoffman 功能描述:6.5mm Triangle Insert Latch Ki