參數(shù)資料
型號: DL323
廠商: Spansion Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 51/58頁
文件大小: 875K
代理商: DL323
December4,2006 25686B10
Am29DL32xG
49
D A T A S H E E T
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 26.
Alternate CE# Controlled Write (Erase/Program) Operation Timings
相關(guān)PDF資料
PDF描述
DL324 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DL4001 1 Amp Glass Passivated Rectifier 50 to 1000 Volts
DL4007 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
DL4001 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
DL4002 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
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