- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376730 > DL323 (Spansion Inc.) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory PDF資料下載
參數(shù)資料
| 型號： | DL323 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，同時作業(yè)快閃記憶體 |
| 文件頁數(shù)： | 52/58頁 |
| 文件大小： | 875K |
| 代理商： | DL323 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁當前第52頁第53頁第54頁第55頁第56頁第57頁第58頁
50
Am29DL32xG
25686B10 December4,2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V (3.0 V for regulated devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP PIN AND FINE-PITCH BGA CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
sec
Byte Program Time
5
150
μs
Excludes system level
overhead (Note 5)
Accelerated Byte/Word Program Time
4
120
μs
Word Program Time
7
210
μs
Chip Program Time
(Note 3)
Byte Mode
21
63
sec
Word Mode
14
42
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DL324 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| DL4001 | 1 Amp Glass Passivated Rectifier 50 to 1000 Volts |
| DL4007 | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| DL4001 | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| DL4002 | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DL324 | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) |
| DL-3247-165 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:RED LASER DIODE |
| DL3-2-J/S | 制造商:ITT Interconnect Solutions 功能描述:249-2060-001 |
| DL33 | 制造商:Pentair Technical Products / Hoffman 功能描述:6.5mm Triangle Insert Latch Ki , fits DL Inst Box, Steel |
| D-L33 | 制造商:Pentair Technical Products / Hoffman 功能描述:6.5mm Triangle Insert Latch Ki |
發(fā)布緊急采購，3分鐘左右您將得到回復。