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參數(shù)資料
| 型號(hào)： | DM4M32SJ-12L |
| 英文描述： | Enhanced DRAM (EDRAM) Module |
| 中文描述： | 增強(qiáng)的DRAM（eDRAM內(nèi)存）模塊 |
| 文件頁(yè)數(shù)： | 23/24頁(yè) |
| 文件大小： | 164K |
| 代理商： | DM4M32SJ-12L |
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/F, W/R,
/WE, /S
t
RP2
t
MSU
t
MH
t
MSU
t
MH
/RE
Don’t Care or Indeterminate
NOTES: 1. EDRAMself refreshes as long as /RE remains low (LowPower Self Refresh part only).
2. When using the LowPower Self Refresh mode the followng operations must be performed:
If rowaddresses are being refreshed in an
evenly distributed
manner over the refresh interval using /F refresh cycles,
then at least one /F refresh cycle must be performed immediately after exit fromthe LowPower Self Refesh Mode.
If rowaddresses are being refreshed in any other manner (/F burst or /RE distributed or burst), then all rows must
be refreshed immediately befor entry to and immediately after exit fromthe LowPower Self Refresh.
A
0-10
0,2
/CAL
Low Power Self-Refresh Mode Option
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