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參數(shù)資料
| 型號： | DM4M32SJ-12L |
| 英文描述： | Enhanced DRAM (EDRAM) Module |
| 中文描述： | 增強(qiáng)的DRAM（eDRAM內(nèi)存）模塊 |
| 文件頁數(shù)： | 24/24頁 |
| 文件大?。?/td> | 164K |
| 代理商： | DM4M32SJ-12L |
1-128
DM4M32SJ -12L
Dynamic Memory
Memory Depth (Megabits)
4M
I/OWidth (Including Parity)
32 = 32 Bits
Packaging System
J = 300 Mil, Plastic SOJ
Memory Module Configuration
S = SIMM
Access Time from Cache in Nanoseconds
12ns
15ns
No Designator = 0 to 70
o
C (Commercial)
L= 0 to 70
o
C, Low Power Self Refresh Option
Lower Power, Self Refresh Option
Part Numbering System
4.595 (116.70)
3.984 (101.19)
0.080 (2.03)
0.050 (1.27)
1.750 (44.45)
2.125 (53.98)
3.750 (95.25)
0.250 (6.35)
0.041 (1.04)
0.062 (1.57) RAD.
0.250 (6.35)
0.062 (1.57) RAD.
0.250 (6.35)
0.400
(10.16)
1.40
(35.56)
0.125
(3.18)
0.100
(2.54)
1
72
U1-13, U16-31, U34-36 —
U14-15, U32-33 —
C1-13, C16-31, C34-36 —
C14-15, C32-33
—
—
Enhanced DM2200J-XX, 4M x 1 EDRAMs, 300 Mil SOJ
IDT 74 FCT 162244CT PA 16-bit Buffer/Line Driver or Equivalent
0.22μF Chip Capacitor
4.7μF Chip Capacitor
Amp 822030-3 or Equivalent
Inches (mm)
Double
Side
Mounting
C
0.185
(4.70)
C
C
C
C
C
C
C
C
C
C
C
C
C
0.350
(8.89)
0.050
(1.27)
0.225
(5.71)
0.125
(3.17)
C
C
C
C
Socket
Mechanical Data
DM4M32SJ 72 Pin SimmModule Configuration
The information contained herein is subject to change wthout notice. Enhanced Memory Systems Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in
an Enhanced product, nor does it convey or imply any license under patent or other rights.
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