參數(shù)資料
型號: DN2640
廠商: Supertex, Inc.
英文描述: N-Channel Depletion-Mode Vertical DMOS FETs
中文描述: N溝道耗盡型場效應(yīng)管垂直的DMOS
文件頁數(shù): 1/2頁
文件大小: 53K
代理商: DN2640
8-13
8
BV
DSX
/
BV
DGX
400V
R
DS(ON)
(max)
I
DSS
(min)
TO-92
Die
6.0
300mA
DN2640N3
DN2640ND
N-Channel Depletion-Mode
Vertical DMOS FETs
DN2640
Advanced DMOS Technology
These depletion-mode (normally-on) transistors utilize an ad-
vanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Ordering Information
Preliminary
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
BV
DGX
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Order Number / Package
Package Options
TO-92
Note
: See Package Outline section for dimensions.
S G D
– OBSOLETE –
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