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參數(shù)資料
| 型號(hào)： | DN2640 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Depletion-Mode Vertical DMOS FETs |
| 中文描述： | N溝道耗盡型場(chǎng)效應(yīng)管垂直的DMOS |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | DN2640 |
8-14
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
250mA
600mA
125
170
250mA
600mA
*
I
D
(continuous) is limited by max rated T
j
.
DN2640
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Symbol
BV
DSX
Parameter
Min
400
Typ
Max
Unit
V
Conditions
Drain-to-Source
Breakdown Voltage
V
GS
= -5V, I
D
= 1.0mA
V
GS(OFF)
V
GS(OFF)
I
GSS
I
D(OFF)
Gate-to-Source OFF Voltage
–1.0
–3.5
V
V
DS
= 25V, I
D
= 10
μ
A
V
DS
= 25V, I
D
= 10
μ
A
V
GS
=
±
20V, V
DS
= 0V
V
GS
= -10V, V
DS
= Max Rating
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 150mA
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
4.5
mV/
°
C
100
nA
Drain-to-Source Leakage Current
10
μ
A
1.0
mA
I
DSS
R
DS(ON)
Saturated Drain-to-Source Current
300
mA
Static Drain-to-Source
ON-State Resistance
6.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.1
%/
°
C
V
GS
= 0V, I
D
= 150mA
I
D
= 200mA, V
DS
= 10V
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
300
m
Input Capacitance
750
Common Source Output Capacitance
75
pF
Reverse Transfer Capacitance
15
Turn-ON Delay Time
15
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 10
Rise Time
20
ns
Turn-OFF Delay Time
25
Fall Time
25
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 200mA
V
GS
= -10V, I
SD
= 1.0A
Reverse Recovery Time
800
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
– OBSOLETE –
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