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參數(shù)資料
| 型號： | DS1216F |
| 廠商： | Maxim Integrated |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SMART/ROM 3V 64/256/1M 32DIP |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 11 |
| 控制器類型： | Smartwatch ROM |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 32-DIP（0.600"，15.24mm）插口 |
| 供應商設備封裝： | 32-DIP 插口 |
| 包裝： | 管件 |
DS1216 SmartWatch RAM/SmartWatch ROM
13 of 15
WARNING:
Under no circumstances should negative undershoots of any amplitude be allowed when the device is in
battery-backup mode. Water washing for flux removal will discharge internal lithium source because
exposed voltage pins are present.
NOTES:
1) Pin locations are designated “U” when a parameter definition refers to the socket receptacle and “L”
when a parameter definition refers to the socket pin.
2) No memory inserted in the socket.
3) Pin 26L can be connected to VCC or left disconnected at the PC board.
4) SmartWatch sockets can be successfully processed through some conventional wave-soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85°C. However, post-solder cleaning with water-washing techniques is not permissible.
Discharge to the lithium energy source can result, even if deionized water is used. It is equally
imperative that ultrasonic vibration is not used in order to avert damage to the quartz crystal resonator
employed by the oscillator circuit.
5) tCE max must be met to ensure data integrity on power loss.
6) VCCO1 is the maximum voltage drop from VCC(L) to VCC(U) while Vcc(L) is supplying power. VCCO2
is the maximum voltage drop from VBAT to VCC(U) while the part is in battery backup.
7) Input pulse rise and fall times equal 10ns.
8) Applies to pins RST L, A2 L, A0 L, CE L, OE L, and WE L.
9) tWR is a functions of the latter occurring edge of WE or CE.
10) tDH and tDS are a function of the first occurring edge of WE or CE.
11) tAS is a function of the first occurring edge of OE or CE.
12) tAH is a function of the latter occurring edge of OE or CE.
13) RST (Pin 1) has an internal pullup resistor.
14) Expected data retention is based on using an external SRAM with a data retention current of less than
0.5A at +25°C. Expected data-retention time (time while on battery) for a given RAM battery
current can be calculated using the following formula:
0.045 / (current in amps) = data-retention time in hours
15) The DS1216 products are shipped with the battery-backup power off. First power-up switches backup
battery on to clock and RAM VCC pin upon power-down.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1216F-3 | 功能描述:IC SMART/ROM 3V 64/256/1M 32DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM（SRAM） 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:16-SOIC W 包裝:管件 |
| DS1216H | 功能描述:存儲器控制器 SmartWatch RAM RoHS:否 制造商:Maxim Integrated |
| DS1216MP000 | 制造商:Thomas & Betts 功能描述:100A,PLG,2P3W,MG,216,208V |
| DS1216MR000 | 制造商:Thomas & Betts 功能描述:100A,NLT,2P3W,MG,216,208V |
| DS1216MRA00 | 制造商:Thomas & Betts 功能描述:100A,NLT,2P3W,MG,AGL,208V |
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