NV, I2C, Stepper Potentiometer 4 ________________________________________" />
參數(shù)資料
型號(hào)： DS3503U+T&R
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 8/13頁(yè)
文件大小： 0K
描述： IC POT DGTL NV 128TAP 10-MSOP
產(chǎn)品培訓(xùn)模塊： Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝： 3,000
接片： 128
電阻（歐姆）： 5k
電路數(shù)： 2
溫度系數(shù)： 標(biāo)準(zhǔn)值 4 ppm/°C
存儲(chǔ)器類型： 非易失
接口： I²C（設(shè)備位址）
電源電壓： 2.7 V ~ 3.6 V
工作溫度： -40°C ~ 100°C
安裝類型： 表面貼裝
封裝/外殼： 10-TFSOP，10-MSOP（0.118"，3.00mm 寬）
供應(yīng)商設(shè)備封裝： 10-µMAX
包裝： 帶卷 (TR)
DS3503
NV, I2C, Stepper Potentiometer
4
_______________________________________________________________________________________
Note 1:
All voltages are referenced to ground. Currents entering the IC are specified positive and currents exiting the IC are negative.
Note 2:
ISTBY is specified with SDA = SCL = VCC and resistor pins floating.
Note 3:
ICC is specified with the following conditions: SCL = 400kHz, SDA pulled up, and RL, RW, RH, and Y floating.
Note 4:
This is the minimum VCC voltage that causes NV memory to be recalled.
Note 5:
This is the time from VCC > VPOR until initial memory recall is complete.
Note 6:
Integral nonlinearity is the deviation of a measured resistor setting value from the expected values at each particular resis-
tor setting. Expected value is calculated by connecting a straight line from the measured minimum setting to the measured
maximum setting. INL = [V(RW)i - (V(RW)0]/LSB(ideal) - i, for i = 0...127.
Note 7:
Differential nonlinearity is the deviation of the step-size change between two LSB settings from the expected step size. The
expected LSB step size is the slope of the straight line from measured minimum position to measured maximum position.
DNL = [V(RW)i+1 - (V(RW)i]/LSB(ideal) - 1, for i = 0...126.
Note 8:
ZSERROR = code 0 wiper voltage divided by one LSB (ideal).
Note 9:
FSERROR = (code 127 wiper voltage - V+) divided by one LSB (ideal).
Note 10: I2C interface timing shown is for fast-mode (400kHz) operation. This device is also backward-compatible with I2C stan-
dard mode timing.
Note 11: CB—total capacitance of one bus line in picofarads.
Note 12: EEPROM write time begins after a STOP condition occurs.
Note 13: Pulses narrower than max are suppressed.
NONVOLATILE MEMORY CHARACTERISTICS
(VCC = +2.7V to +3.6V, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
EEPROM Write Cycles
TA = +70°C
30,000
Writes
SUPPLY CURRENT vs. SUPPLY VOLTAGE
DS3503
toc01
SUPPLY VOLTAGE (V)
SUPPLY
CURRENT
(μ
A)
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
1
2
3
4
5
0
2.7
3.6
SDA = SCL = VCC, V+ = 15V, SYNC = GND
RW, RH, RL, AND Y ARE FLOATING
SUPPLY CURRENT vs. TEMPERATURE
DS3503
toc02
TEMPERATURE (
°C)
SUPPLY
CURRENT
(μ
A)
80
60
40
20
0
-20
2
3
4
5
1
-40
100
SDA = SCL = VCC = 3.3V, V+ = 15V, SYNC = GND
RW, RH, RL, AND Y ARE FLOATING
SUPPLY CURRENT vs. SCL FREQUENCY
DS3503
toc03
SCL FREQUENCY (kHz)
SUPPLY
CURRENT
(μ
A)
350
300
250
200
150
100
50
2
4
6
8
10
12
14
0
400
SDA = VCC = 3.6V, V+ = 15V
SYNC = GND, SCL = 3.6VP-P
RW, RH, RL, AND Y ARE FLOATING
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
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