參數(shù)資料
型號: DSEC30-06B
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: TVS 400W 100V BIDIRECT SMA
中文描述: 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大?。?/td> 50K
代理商: DSEC30-06B
2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-06B
4
I
FAV
V
RRM
= 600 V
t
rr
= 25 ns
= 2x15 A
V
RSM
V
V
RRM
V
Type
600
600
DSEC 30-06B
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
C (TAB)
A
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
50
15
A
A
T
C
= 135°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
= 25°C; non-repetitive; I
AS
= 1 A;
L = 100 μH
L = 20 mH
110
A
0.1
20
mJ
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
T
C
= 25°C
mounting torque
95
W
0.8...1.2
Nm
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C;V
R
= V
RRM
T
VJ
= 150°C;V
R
= V
RRM
I
F
= 15 A;
100
0.5
μA
mA
V
F
T
VJ
= 150°C
T
VJ
= 25°C
1.54
2.51
V
V
R
thJC
R
thCH
t
rr
1.6
K/W
K/W
0.25
I
F
= 1 A; -di/dt = 100 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
25
30
ns
I
RM
2.6
A
相關(guān)PDF資料
PDF描述
DSEC60-02A HiPerFRED Epitaxial Diode with common cathode and soft recovery
DSEC60-03A TVS 400W 10V UNIDIRECT SMA
DSEC60-03AR HiPer FREDTM Epitaxial Diode with common cathode and soft recovery
DSEC60-04A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
DSEC60-06A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
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