參數(shù)資料
型號： DSPIC30F2020-30I/SP
廠商： Microchip Technology
文件頁數(shù)： 42/66頁
文件大?。?/td> 0K
描述： IC DSPIC MCU/DSP 12K 28DIP
產(chǎn)品培訓(xùn)模塊： Asynchronous Stimulus
標(biāo)準包裝： 15
系列： dsPIC™ 30F
核心處理器： dsPIC
芯體尺寸： 16-位
速度： 30 MIP
連通性： I²C，IrDA，LIN，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 21
程序存儲器容量： 12KB（4K x 24）
程序存儲器類型： 閃存
RAM 容量： 512 x 8
電壓 - 電源 (Vcc/Vdd)： 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 28-DIP（0.300"，7.62mm）
包裝： 管件
產(chǎn)品目錄頁面： 650 (CN2011-ZH PDF)
配用： DM300023-ND - KIT DEMO DSPICDEM SMPS BUCK
DV164005-ND - KIT ICD2 SIMPLE SUIT W/USB CABLE
2010 Microchip Technology Inc.
DS70102K-page 47
dsPIC30F Flash Programming Specification
11.9
Writing Data EEPROM
The procedure for writing data EEPROM is very similar
to the procedure for writing code memory, except that
fewer words are programmed in each operation. When
writing data EEPROM, one row of data EEPROM is
programmed at a time. Each row consists of sixteen
16-bit data words. Since fewer words are programmed
during each operation, only working registers W0:W3
are used as temporary holding registers for the data to
be programmed.
Table 11-9 shows the ICSP programming details for
writing data EEPROM. Note that a different NVMCON
value is required to write to data EEPROM, and that the
TBLPAG register is hard-coded to 0x7F (the upper byte
address of all locations of data EEPROM).
TABLE 11-9:
SERIAL INSTRUCTION EXECUTION FOR WRITING DATA EEPROM
Command
(Binary)
Data
(Hexadecimal)
Description
Step 1: Exit the Reset vector.
0000
040100
000000
GOTO 0x100
NOP
Step 2: Set the NVMCON to write 16 data words.
0000
24005A
883B0A
MOV
#0x4005, W10
MOV
W10, NVMCON
Step 3: Initialize the write pointer (W7) for TBLWT instruction.
0000
2007F0
880190
2xxxx7
MOV
#0x7F, W0
MOV
W0, TBLPAG
MOV
#<DestinationAddress15:0>, W7
Step 4: Load W0:W3 with the next 4 data words to program.
0000
2xxxx0
2xxxx1
2xxxx2
2xxxx3
MOV
#<WORD0>, W0
MOV
#<WORD1>, W1
MOV
#<WORD2>, W2
MOV
#<WORD3>, W3
Step 5: Set the read pointer (W6) and load the (next set of) write latches.
0000
EB0300
000000
BB1BB6
000000
BB1BB6
000000
BB1BB6
000000
BB1BB6
000000
CLR
W6
NOP
TBLWTL [W6++], [W7++]
NOP
TBLWTL [W6++], [W7++]
NOP
TBLWTL [W6++], [W7++]
NOP
TBLWTL [W6++], [W7++]
NOP
Step 6: Repeat steps 4-5 four times to load the write latches for 16 data words.
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