參數(shù)資料
型號： DT28F016SV-080
廠商： INTEL CORP
元件分類： DRAM
英文描述： 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
中文描述： 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
封裝： 23.70 X 16 MM, SSOP-56
文件頁數(shù)： 12/63頁
文件大?。?/td> 635K
代理商： DT28F016SV-080
28F016SV FlashFile MEMORY
E
12
2.1 Lead Descriptions
(Continued)
Symbol
Type
Name and Function
RY/BY#
OPEN DRAIN
OUTPUT
READY/BUSY:
Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# floating
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or erase is suspended, or the device is
in deep power-down mode. This output is always active (i.e., not floated
to tri-state off when OE# or CE
0
#, CE
1
# are high), except if a RY/BY# Pin
Disable command is issued.
WRITE PROTECT:
Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or erases. When WP# is high, all blocks can
be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE ENABLE:
BYTE# low places device in x8 mode. All data is then
input or output on DQ
0
–7
, and DQ
8
–15
float. Address A
0
selects between
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A
0
input buffer. Address A
1
, then becomes the lowest order
address.
3.3/5.0 VOLT SELECT:
3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5V operation.
NOTE:
Reading the array with 3/5# high in a 5V system could damage the
device. Reference the power-up and reset timings (Section 5.7) for 3/5#
switching delay to valid data.
PROGRAM/ERASE POWER SUPPLY (12V ± 0.6V, 5V ± 0.5V) :
For
erasing memory array blocks or writing words/bytes/pages into the flash
array. V
PP
= 5V ± 0.5V eliminates the need for a 12V converter, while
connection to 12V ± 0.6V maximizes Program/Erase Performance.
NOTE:
Successful completion of program and erase attempts is inhibited with
V
PP
at or below 1.5V. Program and erase attempts with V
PP
between 1.5V
and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious
results and should not be attempted.
DEVICE POWER SUPPLY (3.3V ± 0.3V, 5V ± 0.5V, 5.0 ± 0.25V):
To switch 3.3V to 5V (or vice versa), first ramp V
CC
down to GND, and
then power to the new V
CC
voltage.
Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NO CONNECT:
Lead may be driven or left floating.
WP#
INPUT
BYTE#
INPUT
3/5#
INPUT
V
PP
SUPPLY
V
CC
SUPPLY
GND
SUPPLY
NC
相關PDF資料
PDF描述
DT28F016SV-100 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
DT28F016SA-100 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DT28F016SA-150 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DT28F160F3B120 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3B95 FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
相關代理商/技術參數(shù)
參數(shù)描述
DT28F016SV-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
DT28F160 制造商:Intel 功能描述:
DT28F160F3B120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3B95 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
DT28F160F3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
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